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| 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features * High power gain, Low noise figure at low power operation: |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 2 Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WG-". 2SC5812 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5 50 80 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Collector output capacitance Gain bandwidth product Gain bandwidth product Forward transmission coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre Cob fT(1) fT(2) |S21| NF 2 Min 15 100 8 14 Typ 120 0.2 0.4 11 15 17 1.0 Max 0.1 1 0.1 150 0.7 1.7 Unit V A A A pF pF GHz GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = Infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, Emitter ground, f = 1 MHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1V, IC = 5 mA VCE = 1V, IC = 20 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50 Rev.0, Nov. 2001, page 2 of 10 2SC5812 Collector Power Dissipation Curve Typical Output Characteristics 180 Collector Power Dissipation PC (mW) 100 20 A 160 A 140 A 120 A 80 60 Collector Current IC (mA) 15 100 A 10 80 A 60 A 40 5 40 A 20 IB = 20 A 0 50 100 150 200 250 0 1 2 3 4 Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 25 200 VCE = 1 V 20 DC Current Transfer Ratio vs. Collector Current IC (mA) Collector Current 15 DC Current Transfer Ratio hFE VCE = 1 V 100 10 5 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 0 0.1 1.0 10 Collector Current IC (mA) 100 Rev.0, Nov. 2001, page 3 of 10 2SC5812 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz Reverse Transfer Capacitance vs. Collector to Base Voltage Emitter ground f = 1 MHz 0.8 Reverse Transfer Capacitance Cre (pF) Collector Output Capacitance Cob (pF) 1.0 0.8 1.0 0.6 0.6 0.4 0.2 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 VCB (V) 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector to Base Voltage Collector to Base Voltage VCB (V) fT (GHz) 20 16 Gain Bandwidth Product vs. Collector Current 20 S21 Parameter vs. Collector Current |S21|2 (dB) S21 Parameter VCE = 1 V f = 1 GHz 16 Gain Bandwidth Product 12 12 8 4 0 1 2 5 10 20 50 100 Collector Current IC (mA) 8 4 0 1 VCE = 1 V f = 900 MHz 2 5 10 20 50 100 Collector Current IC (mA) Rev.0, Nov. 2001, page 4 of 10 2SC5812 5 Noise Figure vs. Collector Current VCE = 1 V f = 900 MHz NF (dB) Noise Figure 4 3 2 1 0 1 2 5 10 20 50 Collector Current IC (mA) 100 Rev.0, Nov. 2001, page 5 of 10 2SC5812 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -5 -4 -3 -.4 -2 -.6 -.8 -1 -1.5 -120 -90 -60 180 0 150 30 1 1.5 2 120 S21 Parameter vs. Frequency 90 Scale: 8 / div. 60 -150 -30 Test conditions: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Test conditions: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 30 .2 Scale: 0.04 / div. 60 150 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 -10 -.2 -150 -30 -.4 -2 -120 -90 -60 -.6 -.8 -1 -1.5 -5 -4 -3 Test conditions: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Test conditions: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz step) (IC = 5 mA) (IC = 20 mA) Rev.0, Nov. 2001, page 6 of 10 2SC5812 S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.842 0.783 0.719 0.637 0.582 0.531 0.472 0.443 0.404 0.377 0.355 0.337 0.327 0.305 0.299 0.297 0.284 0.282 0.272 0.268 ANG -16.3 -31.7 -44.6 -55.4 -65.9 -73.2 -80.9 -87.0 -92.3 -99.2 -103.4 -108.0 -112.6 -116.3 -120.3 -123.8 -127.7 -132.2 -134.3 -138.4 S21 MAG 15.23 14.17 12.84 11.41 10.25 9.16 8.22 7.49 6.80 6.26 5.80 5.38 5.04 4.71 4.45 4.20 3.98 3.80 3.62 3.47 ANG 164.9 152.2 141.4 131.8 124.8 118.6 113.1 108.9 104.6 101.0 98.1 94.8 92.4 90.1 87.7 86.0 83.6 81.7 79.8 77.9 S12 MAG 0.015 0.027 0.037 0.045 0.051 0.056 0.061 0.065 0.069 0.073 0.077 0.081 0.085 0.090 0.094 0.099 0.104 0.109 0.114 0.120 ANG 80.2 72.9 66.8 62.9 60.8 60.1 59.7 60.0 60.7 61.5 62.8 64.1 65.0 66.4 67.5 68.5 70.0 71.1 72.0 73.0 S22 MAG 0.963 0.904 0.826 0.754 0.691 0.638 0.595 0.561 0.530 0.508 0.490 0.474 0.461 0.452 0.440 0.437 0.428 0.423 0.418 0.414 ANG -10.1 -18.4 -24.9 -29.4 -32.9 -35.0 -36.7 -37.7 -38.5 -39.1 -39.7 -40.4 -40.8 -41.7 -42.0 -42.8 -43.4 -44.3 -45.3 -46.0 Rev.0, Nov. 2001, page 7 of 10 2SC5812 (VCE = 1 V, IC = 20 mA, ZO = 50 ) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.502 0.388 0.317 0.257 0.237 0.216 0.195 0.193 0.181 0.179 0.178 0.176 0.176 0.166 0.175 0.172 0.172 0.179 0.177 0.183 ANG -40.3 -66.7 -84.6 -99.2 -109.6 -115.5 -125.0 -129.2 -135.9 -141.0 -142.4 -147.8 -150.0 -154.2 -158.0 -159.7 -162.4 -164.9 -166.8 -169.9 S21 MAG 36.64 27.85 21.13 16.75 13.87 11.77 10.19 9.00 8.03 7.26 6.66 6.12 5.68 5.32 4.97 4.70 4.43 4.21 4.01 3.83 ANG 147.5 127.8 116.2 108.5 103.5 99.5 96.1 93.5 90.8 88.8 86.8 84.7 83.2 81.7 80.0 78.7 77.0 75.7 74.3 72.8 S12 MAG 0.013 0.021 0.027 0.034 0.040 0.047 0.054 0.060 0.068 0.074 0.081 0.088 0.094 0.102 0.109 0.116 0.123 0.131 0.138 0.145 ANG 76.3 70.3 69.3 72.2 73.6 75.0 75.6 76.3 77.1 77.7 78.1 78.2 78.4 78.5 78.6 79.0 78.9 78.8 78.7 78.5 S22 MAG 0.824 0.653 0.531 0.460 0.416 0.387 0.367 0.352 0.340 0.333 0.326 0.321 0.317 0.314 0.311 0.309 0.307 0.305 0.304 0.303 ANG -21.8 -32.0 -35.4 -35.8 -35.2 -34.8 -34.1 -33.7 -33.2 -33.3 -33.7 -34.0 -34.5 -35.1 -36.0 -36.8 -37.6 -38.6 -39.7 -40.8 Rev.0, Nov. 2001, page 8 of 10 2SC5812 Package Dimensions As of July, 2001 Unit: mm 0.2 1.4 0.05 1.2 0.05 0.8 0.1 0.2 0.45 0.9 0.1 0.45 0.6 MAX Hitachi Code JEDEC JEITA Mass (reference value) (0.1) (0.1) 3-0.2 +0.1 -0.05 0.15 +0.1 -0.05 MFPAK -- -- 0.0016 g Rev.0, Nov. 2001, page 9 of 10 2SC5812 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.0, Nov. 2001, page 10 of 10 |
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